Method involving pulsed light processing of semiconductor devices
US4151008A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 1977 |
| Grant date | Apr 24, 1979 |
| Priority date | — |
| Expiry date | Mar 23, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2686
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pulsed laser or flash lamp produces a short duration pulse of light for thermal processing of selected regions of a semiconductor device. The light pulse is directed towards the semiconductor device and irradiates selected surface regions of the device to be processed. Energy deposited by the light pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the light pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature and the remaining mass of the semiconductor device is not subjected to unnecessary or undesirable high temperature exposure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.