Method for manufacturing a layer of amorphous silicon usable in an electronic device
US4151058A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1978 |
| Grant date | Apr 24, 1979 |
| Priority date | — |
| Expiry date | Jun 5, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method aiming at imparting to the amorphous silicon properties which are compatible with the possibility of modifying by doping or field effect the position of the Fermi level in the volume of the amorphous silicon, a prime requirement for the operation of semiconductor devices. The method comprises a first step of depositing a layer of amorphous silicon onto a substrate under conditions ensuring the purity of the deposit obtained, then a second step wherein the deposit is subjected to a heat treatment consisting in maintaining the deposit in the atmosphere of a plasma containing atomic hydrogen for saturating the existing broken chemical bonds responsible for a parasitic electric conductivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.