Patent · US Expired

Semiconductor electric circuit device with plural-layer aluminum base metallization

US4151545A · kind A · utility

20Cited by

6References

7Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Dietmar Schnepf
Klaus Reindl · Erlangen, DE
Heiko Gruner · Stuttgart, DE
Friedrich Vogel · Monsheim, DE

Key dates

Filing date	Oct 13, 1977
Grant date	Apr 24, 1979
Priority date	—
Expiry date	Oct 13, 1997

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/20755
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A pure aluminum outer layer is provided to facilitate bonding with aluminum bonding wires having a diameter of 50 .mu.m or greater without formation of troublesome slivers upon bonding. Beneath that a copper-bearing aluminum layer with 1 to 4% copper content is provided. A third layer beneath the copper-bearing layer containing up to 1% silicon can be added below the copper-bearing layer to promote adhesion at contact window edges.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.