Silicon carbide and silicon bonded polycrystalline diamond body and method of making it
US4151686A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 9, 1978 |
| Grant date | May 1, 1979 |
| Priority date | — |
| Expiry date | Jan 9, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2235/96
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.