High temperature refractory metal contact assembly and multiple layer interconnect structure
US4152823A · kind A · utility
14Cited by
3References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 28, 1977 |
| Grant date | May 8, 1979 |
| Priority date | — |
| Expiry date | Apr 28, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-layer integrated semiconductor circuit interconnection structure with a first layer formed of a refractory metal sandwich including outer layers of silicon and a core of refractory metal providing a high temperature low ohmic contact assembly, an insulating layer formed on the first layer, and a patterned metal layer formed on the insulating layer to interconnect with the refractory layer and semiconductor device to provide an integrated circuit assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.