Method of making a metalized substrate having a thin film barrier layer
US4153518A · kind A · utility
28Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1977 |
| Grant date | May 8, 1979 |
| Priority date | — |
| Expiry date | Nov 18, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12618
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a hybrid circuit including a siliceous substrate and thick metal conductors. A thin film barrier layer is provided intermediate the substrate and a vacuum-deposited metal layer, which metal layer is subsequently electroplated to provide the desired metal thickness. The barrier layer, which may suitably be a refractory metal oxide such as the oxides of zirconium, tantalum, titanium, or tungsten, prevents loss of adhesion between the vacuum deposited metal and substrate that occurs during electroplating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.