Semiconductor device having a high breakdown voltage junction characteristic
US4153904A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1977 |
| Grant date | May 8, 1979 |
| Priority date | — |
| Expiry date | Oct 3, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/913
Abstract
A semiconductor device having a p-n junction characterized by low electric field crowding and a resulting high avalanche breakdown voltage requirement. The semiconductor device is comprised of a semiconductor substrate having impurity atoms of one type and a first surface. A first doped region lies in said substrate at said first surface and has dopant atoms of a type opposite to said one type. A second doped region lies in said substrate at said first surface adjacent the entire perimeter of said first doped region. The second doped region extends laterally away from said first doped region, and has dopant atoms of the same type as and of less density than said dopant atoms of said first doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.