Method for forming intermetallic layers in thin films for improved electromigration resistance
US4154874A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 1977 |
| Grant date | May 15, 1979 |
| Priority date | — |
| Expiry date | Feb 4, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12486
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming narrow intermetallic stripes which will carry high currents on bodies such as semiconductors, integrated circuits, magnetic bubbles structures, etc. The conductive stripe includes aluminum or aluminum copper with at least one transition metal. The aluminum and at least one transition metal are deposited onto a supporting body at a very low pressure in a substantially oxygen-free high vacuum. The composite is then annealed at a temperature between about 200.degree. C. and 525.degree. C. for a time sufficient to form an aluminum and transition metal compound within the aluminum. The conductive stripes are then formed by masking and removing portions of the annealed metallic material. The resulting conductive stripes, which may be of a width of about 6.times.10.sup.-4 inches or less, have a significantly improved electromigration performance without significantly increasing resistance in the conductive stripe.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.