Method of manufacturing power semiconductors with pressed contacts
US4155155A · kind A · utility
13Cited by
6References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 1978 |
| Grant date | May 22, 1979 |
| Priority date | — |
| Expiry date | Jan 10, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of manufacturing power semiconductors with pressed contacts and with an interdigitated structure. The thickest contact metal coverings are formed by application of a metal layer by serigraphy on a first thin metal layer deposited by evaporation in a vacuum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.