Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
US4155777A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1977 |
| Grant date | May 22, 1979 |
| Priority date | — |
| Expiry date | Oct 7, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A zener diode in which the anode region of a first conductivity material is formed by diffusion in a semiconductor body, a cathode region of a second conductivity material is formed by diffusion in the semiconductor body, and the two regions are bridged by a third region extending through the two regions, the third region being a shallow layer of ion implanted doping material of said first conductivity type. In one embodiment, the anode and cathode regions are spaced-apart; in a second embodiment the cathode region is formed within the anode region. The ion implanted layer has a concentration that peaks below the surface, thus establishing the breakdown point for the avalanching of the zener diode below the surface and removed from surface contaminants such as found in the oxide surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.