Process for epitaxially growing a gallium arsenide layer having reduced silicon contaminants on a gallium arsenide substrate
US4155784A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1977 |
| Grant date | May 22, 1979 |
| Priority date | — |
| Expiry date | Apr 8, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for epitaxially forming a layer of gallium arsenide having a first conductivity on a substrate of gallium arsenide having a second conductivity in an enclosure having an inner liner comprised of a silicon compound, comprising decomposing arsine to form arsenic; chemically reacting a first quantity of hydrogen chloride and gallium to form gallium chloride, the gallium chloride reacting with the arsenic to form gallium arsenide on the substrate, a portion of the first quantity of hydrogen chloride remaining unreacted and tending to cause silicon contaminants from the liner to be deposited on the substrate; and providing a second quantity of hydrogen chloride into the enclosure which serves to initially etch, and hence clean, the outer surface of the substrate prior to the formation of gallium arsenide thereon, and simultaneously tends to inhibit the formation of silicon contaminants on the substrate, the second quantity and the first quantity having a preselected ratio such that the growth rate of the gallium arsenide layer on the substrate is greater than the etching rate of gallium arsenide due to the second quantity of hydrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.