Method of controlling silicon wafer etching rates-utilizing a diazine catalyzed etchant
US4155866A · kind A · utility
19Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1978 |
| Grant date | May 22, 1979 |
| Priority date | — |
| Expiry date | Apr 24, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.