Passivated V-gate GaAs field-effect transistor

US4156879A · kind A · utility

Assignee

• Hughes Aircraft Company · US

Inventor

• Don-Hee Lee · Seojong-myeon, KR

Key dates

• Filing date: Feb 7, 1977
• Grant date: May 29, 1979
• Expiry date: Feb 7, 1997

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/15

Abstract

The specification describes a new and improved Schottky-gate field-effect transistor (FET) and process for fabricating same wherein selective and multiple ion implantation doping steps are used to form source, drain and channel regions in a semiconductor body. The semiconductor body is then selectively etched to expose the source and drain regions previously formed, while leaving intact a mesa-shaped, high resistivity stabilizing region of the semiconductor body overlying and electrically stabilizing the ion-implanted channel region. The semiconductor body is then partially passivated with a chosen dielectric layer having two openings therein for exposing source and drain regions, respectively, and a third opening which is aligned with the channel region. Ohmic contacts are deposited in the source and drain openings, and thereafter a V-shaped groove is etched in the mesa-shaped region overlying the channel region to expose a very small area of the channel region. Schottky-gate metallization is then deposited in this V-shaped groove to form the Schottky-gate electrode of the device, and the fully passivated device thus formed exhibits excellent source and drain contact resistance an…