Polycrystalline varistors with reduced overshoot
US4157527A · kind A · utility
7Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 20, 1977 |
| Grant date | Jun 5, 1979 |
| Priority date | — |
| Expiry date | Oct 20, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C7/102
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A metal oxide varistor structure having a reduced voltage overshoot is disclosed. In accordance with one embodiment of the invention, the varistor disk, for example, is provided with a relatively small region of reduced thickness, the amount of said thickness reduction being dependent upon the original thickness of the varistor substrate. The area of region of reduced thickness is selected to control conduction duration in the region of reduced thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.