High power transistor
US4157561A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1977 |
| Grant date | Jun 5, 1979 |
| Priority date | — |
| Expiry date | Sep 27, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/231
Abstract
This invention relates to a high power bipolar transistor comprising a collector region, a base region formed in the collector region and emitter regions formed in the base region, with each of the emitter regions being a closed loop at the surface of the base region. The emitter electrode contact region is arranged at the surface of base region and surrounded by the emitter region, and the emitter electrode contact region and emitter region are connected by a conductive area, with the conductive area being shallower than the emitter region. In addition, the conductive area is connected to the internal surface of the emitter region at one or more points but is not connected to the entire part of the internal surface of the emitter region. By such a configuration, a current generated by the internal voltage due to remaining injection carriers, (particularly during the turn-off period), flows through the internal surface of the emitter region in an essentially uniform fashion, thereby preventing secondary breakdown of the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.