Solar cell manufacture
US4158591A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 1978 |
| Grant date | Jun 19, 1979 |
| Priority date | — |
| Expiry date | Apr 24, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/928
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing solar cells wherein a plurality of wafers of a first conductivity type are assembled and thereafter doped with an active impurity of an opposite conductivity imparting type to establish a p-n junction. Thereafter front and back contacts are formed on the wafers by metallization, the back contact material being chosen so that it penetrates any p-n junctions present in the area of the back contact, if any, and thereby forms a low resistance ohmic contact through any such junction. Thereafter the contact containing wafers are coin stacked and plasma etched so that the edge faces of the coin stacked wafers have removed therefrom sufficient p-n junction to electrically isolate the front junction from the back junction or junctions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.