Optically coupled linear bilateral transistor
US4160258A · kind A · utility
12Cited by
8References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 1977 |
| Grant date | Jul 3, 1979 |
| Priority date | — |
| Expiry date | Nov 18, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/245
Abstract
A symmetric double heterojunction transistor consisting of a lightly doped wide bandgap--heavily doped narrow bandgap--lightly doped wide bandgap structure with the wide bandgap materials having a conductivity type opposite to that of the narrow bandgap material is optically accessed, symmetric with respect to the polarity of applied bias across the transistor and has linear current-voltage characteristics through the origin. A preferred embodiment uses a nGa.sub.1-x Al.sub.x As-pGaAs-nGa.sub.1-x Al.sub.x As structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.