Glass-ceramics for semiconductor doping
US4160672A · kind A · utility
6Cited by
5References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 18, 1976 |
| Grant date | Jul 10, 1979 |
| Priority date | — |
| Expiry date | Feb 18, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/95
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of SiO.sub.2 15-40, Al.sub.2 O.sub.3 15-30, B.sub.2 O.sub.3 20-60, RO 5-25, La.sub.2 O.sub.3 0-5, Nb.sub.2 O.sub.5 0-5 and Ta.sub.2 O.sub.5 0-5 wherein RO is selected from MgO, CaO, SrO and BaO in specified percentages, and mixtures thereof and wherein the ratio Al.sub.2 O.sub.3 to RO is 1.5-4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.