Etch process for chromium
US4160691A · kind A · utility
9Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1977 |
| Grant date | Jul 10, 1979 |
| Priority date | — |
| Expiry date | Dec 9, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/26
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Chromium/copper/chromium conductor lines and glass-chromium cermet resistor structures are formed on a substrate by a subtractive etch process in which undercutting of the top chromium layer and changes in the resistivity of the cermet are minimized by etching the chromium with a mixture of a low concentration (about 5 to 20% by volume) of concentrated (37%) HCl in about 65 to 95% by volume of an aliphatic alcohol such as glycerine with the remainder, if any, to make 100% being water at an elevated temperature of from about 50.degree. to 95.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.