Integrated injection logic (I-squared L) with double-diffused type injector
US4160988A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 24, 1977 |
| Grant date | Jul 10, 1979 |
| Priority date | — |
| Expiry date | Jun 24, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/087
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure, and method for fabrication, including a semiconductor body of one conductivity type having a major surface. A layer of opposite conductivity material is formed on said surface, said layer having an upper planar surface generally parallel to said major surface. Spaced first and second collector regions are carried by said layer. A third one conductivity region is formed in said layer spaced from said first and second region and extending to an exposed surface of said layer. A fourth region of opposite conductivity type is formed within said third region and extends to an exposed surface of said layer. The layer, third and forth regions form the respective regions of an opposite conductivity--one conductivity--opposite conductivity type source transistor. Additionally, the body, the layer and the first and second regions form the respective regions of a one conductivity--opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.