Semiconductor laser
US4161701A · kind A · utility
17Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1977 |
| Grant date | Jul 17, 1979 |
| Priority date | — |
| Expiry date | Mar 24, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8582
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor layer for supporting a diode chip of a semiconductor laser is formed to be higher than a semiconductor layer containing a current-conducting region, whereby stresses acting on the diode chip by mounting the diode chip are relieved to prevent degradation of performance and reduced life of the semiconductor laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.