Sensitive silicon pin diode fast neutron dosimeter
US4163240A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1977 |
| Grant date | Jul 31, 1979 |
| Priority date | — |
| Expiry date | Mar 21, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T3/08
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A method is disclosed of controlling and improving the sensitivity of silicon PIN diodes to dosage by fast neutrons. The method includes selecting a silicon mass of high resistivity n or p-type material having a relatively long minority carrier lifetime, in excess of 250 microseconds ( .mu. sec) providing n.sup.+ and p.sup.+ -type junctions, and arranging the mass to obtain a silicon PIN diode dosimeter having a preselected ratio of edge area to volume. A silicon PIN diode personnel dosimeter sensitive to a radiation level of absorbed dose as low as 0.1 rad has been produced; this dosimeter, in the range from about 0.1 rad to about 10 rads has a sensitivity of at least 10 mV/rad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.