High thermal conductivity substrate
US4163769A · kind A · utility
41Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1978 |
| Grant date | Aug 7, 1979 |
| Priority date | — |
| Expiry date | Apr 3, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high thermal conductivity substrate is formed by making a sintered diamond composite and thereafter modifying the electrical properties of the composite by leaching graphite and other non-diamond materials from the composite and subsequently infusing the leached composite with material having known electrical properties. Alternatively, a diamond composite having high thermal conductivity known electrical properties if prepared and subsequently leached to remove graphite and other materials which interfere with the known electrical properties of the composite material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.