Field effect transistor
US4163984A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 1978 |
| Grant date | Aug 7, 1979 |
| Priority date | — |
| Expiry date | Jan 27, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
Abstract
A field effect transistor having a doping concentration profile selected to linearize the relationship between the transconductance of the transistor and the level of a gate voltage fed to the gate electrode of such transistor over the operating range of such voltage. A first doping concentration profile is "spike-shaped" so that the bottom of the depletion zone and hence the transconductance is substantially invariant with gate voltage level. A second doping concentration profile, N(x), varies substantially as 1/x.sup.3 (where x is the depth from the surface of the transistor) over the operating range of the bottom of the depletion zone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.