Process for making a semiconductor component with electrical contacts
US4164811A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 25, 1977 |
| Grant date | Aug 21, 1979 |
| Priority date | — |
| Expiry date | Feb 25, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49179
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component with electric contacts is formed which includes a semiconductor body having metal contact layers formed in ohmic contact with at least two side surfaces thereof. In the process of making the component, a layer sequence is made including two layers formed of thermoplastic material and an intermediate layer of conductive material sandwiched between the two thermoplastic layers. In the process the temperature of the semiconductor body is raised to soften the thermoplastic material and the semiconductor body with its metal contacts is pressed through one of the thermoplastic layers, through the intermediate conductive layer to rupture the same and divide it into two parts and partially into the other thermoplastic layer. The intermediate layer is now composed of two parts, each part being conductively in contact with one of the metal contacts on the side surfaces of the semiconductor body. By forcing the semiconductor body and the leads through one of the thermoplastic layers into a desired position in the other thermoplastic layer, the first thermoplastic layer referred to, when cooled, partially extends upwardly against the respective faces of the semiconduc…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.