Monolithic CMOS digital temperature measurement circuit
US4165642A · kind A · utility
Inventor
Key dates
| Filing date | Mar 22, 1978 |
| Grant date | Aug 28, 1979 |
| Priority date | — |
| Expiry date | Mar 22, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A monolithic integrated complementary metal oxide semiconductor (CMOS) circuit senses internal junction temperature and converts it to a binary coded decimal output signal. The circuit compares a temperature dependent junction voltage with a bandgap reference voltage controlled by a very stable amplifier. The comparison differential is then converted to a binary coded decimal output signal by an analog to digital converter. The circuit utilizes parasitic bipolar NPN transistor elements formed from a substrate of the chip in a conventional CMOS fabrication process. The principles of the present invention are also broadly applicable to other semiconductor technologies such as integrated injection logic (I.sup.2 L).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.