Sputtering process and apparatus
US4166018A · kind A · utility
182Cited by
11References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 31, 1974 |
| Grant date | Aug 28, 1979 |
| Priority date | — |
| Expiry date | Jan 31, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Sputtering apparatus is described in which a magnetic field is formed adjacent a planar sputtering surface, the field comprising arching lines of flux over a closed loop erosion region on the sputtering surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.