High-pressure, high-temperature gaseous chemical apparatus
US4167915A · kind A · utility
45Cited by
5References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 9, 1977 |
| Grant date | Sep 18, 1979 |
| Priority date | — |
| Expiry date | Mar 9, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.