Determining semiconductor characteristic
US4168212A · kind A · utility
26Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 1978 |
| Grant date | Sep 18, 1979 |
| Priority date | — |
| Expiry date | Apr 25, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The electrochemical measuring technique of the present invention employs, as the barrier material, a concentrated electrolyte, which also forms a medium for the controlled dissolution of a surface of the semiconductor so as to provide a continuous depth profile. The depth profile characteristic may be determined by capacitance-voltage measurements on n-type bulk GaAs, using KOH as the electrolyte.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.