X-ray analyzer for testing layered structures
US4169228A · kind A · utility
40Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1978 |
| Grant date | Sep 25, 1979 |
| Priority date | — |
| Expiry date | Jun 5, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/076
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
X-ray fluorescence produced by a primary X-ray beam incident at a very flat angle (below 1.degree.) onto the surface of a specimen contained in a vacuum chamber is used to analyze shallow layers and/or to determine depths of shallow surface layers, such as a very thin (typically between about 10A and 10.sup.3 A) silicon coating on Al or Cu layers which overlay a silicon substrate. Semiconductor profile determination may be another application of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.