Process for polishing semi-conductor materials
US4169337A · kind A · utility
85Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 30, 1978 |
| Grant date | Oct 2, 1979 |
| Priority date | — |
| Expiry date | Mar 30, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Semi-conductors can be polished with greater efficiency by using as a polishing agent a blend of colloidal silica or silica gel and a water-soluble amine.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.