Method of doping a body of amorphous semiconductor material by ion implantation

US4169740A · kind A · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Siegfried Kalbitzer · Heidelberg, DE
• Gerhard Muller · Grafing, DE
• Walter E. Spear · Dundee, GB
• Peter G. Le Comber, deceased · Dundee, GB

Key dates

• Filing date: Jun 16, 1978
• Grant date: Oct 2, 1979
• Expiry date: Jun 16, 1998

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/093
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

To provide for effective doping and obtain substantial conductivity change in amorphous semiconductor material, typically silicon, a body of said material is raised to a temperature above about 20.degree. C. and below the recrystallization temperature, for example in the range of between 100.degree. C., preferably above 200.degree.-250.degree. C. and below about 450.degree. C. during the ion implantation. The doping ions are, for example for silicon, of groups III and V of the periodic system, particularly boron and phosphorus. Semiconductor junctions can be made by this process by selectively doping spatially limited regions of the semiconductor body to thereby produce semiconductor components by doping with ions of different characteristics, for example of different conductivity type.