Method of selective oxidation in manufacture of semiconductor devices
US4170492A · kind A · utility
25Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 1978 |
| Grant date | Oct 9, 1979 |
| Priority date | — |
| Expiry date | Apr 18, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively enhancing the growth rate of silicon oxide in the manufacture of semiconductor devices results in a reduction in encroachment of oxide into the edges of areas masked by silicon nitride. Implanting an impurity material into the monocrystalline silicon surface, without annealling to correct implant damage, causes the surface to oxidize at lower temperatures and faster rates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.