Process for forming field dielectric regions in semiconductor structures without encroaching on device regions
US4170500A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 15, 1979 |
| Grant date | Oct 9, 1979 |
| Priority date | — |
| Expiry date | Jan 15, 1999 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/762
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming the field dielectric regions in semiconductor structures without encroaching upon device areas includes the steps of forming an insulating layer on a surface of a semiconductor substrate, forming regions of selected material on the surface of said insulating layer, converting said regions of selected material to insulating material, and removing the insulating layer from the surface of the semiconductor substrate except where the insulating material overlies the insulating layer. Active and/or passive electronic devices may then be formed in the exposed regions of said semiconductor substrate using well known semiconductor processing technology. The combined insulating layer and insulating material will prevent field inversion from occuring in all of those regions of the semiconductor substrate on which the insulating layer and the insulating material are disposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.