Process for manufacturing pure polycrystalline silicon
US4170667A · kind A · utility
11Cited by
6References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 24, 1978 |
| Grant date | Oct 9, 1979 |
| Priority date | — |
| Expiry date | Apr 24, 1998 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/24
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for the production of high purity polycrystalline silicon from a mixture of silicon tetrachloride and trichlorosilane. Such a mixture can be used for the rapid deposition of polycrystalline silicon while, at the same time, producing an excess of trichlorosilane in exhaust gases from the reaction. The process permits the modification of the reactor design for the economical and energy conscious production of polycrystalline silicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.