Barrier height voltage reference
US4170818A · kind A · utility
8Cited by
3References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 1977 |
| Grant date | Oct 16, 1979 |
| Priority date | — |
| Expiry date | Oct 3, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/87
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A barrier height voltage reference includes two field-effect transistors which are substantially identical except for their gate-to-channel potential barrier characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the two field effect transistors produces a voltage reference which is substantially independent of operating point, supply potential, and temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.