Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
US4171234A · kind A · utility
25Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 1977 |
| Grant date | Oct 16, 1979 |
| Priority date | — |
| Expiry date | Jul 13, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Three-dimensional structures having a suitable geometrical configuration are directly formed on one major surface of a substrate so that an epitaxial molecular beam may be incident on preselected regions, and the angles of incidence of epitaxial molecular beams are varied. As a result the arrival rates of molecular beams are varied from one region to another on the substrate so that a three-dimensional epitaxial layer in which the physical properties are different from one region of a submicron across to another may be grown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.