Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
US4171242A · kind A · utility
32Cited by
7References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 8, 1978 |
| Grant date | Oct 16, 1979 |
| Priority date | — |
| Expiry date | Mar 8, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon etchant is disclosed composed of an aqueous solution of a fluoride ion and oxygen maintained at a substantially neutral pH. The etchant eliminates the problems of stripping organic photoresists, maintaining silicon/phosphosilicate glass selectively, silicon surface pitting, oxide residues, and insoluble reaction products.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.