Method of etching a semiconductor substrate
US4172005A · kind A · utility
32Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1977 |
| Grant date | Oct 23, 1979 |
| Priority date | — |
| Expiry date | Oct 20, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76297
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a semiconductor substrate which comprises the steps of selectively mounting an etching mask on the semiconductor substrate and effecting selective etching by an anisotropic etchant comprising an aqueous solution containing 0.1 to 20% by weight of trihydrocarbon-substituted (hydroxyhydrocarbon-substituted) ammonium hydroxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.