Method and apparatus for monitoring and controlling sputter deposition processes
US4172020A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 1978 |
| Grant date | Oct 23, 1979 |
| Priority date | — |
| Expiry date | May 24, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/34
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system is provided for monitoring sputtering deposition parameters and through closed-loop control achieving rapid modification of the parameters to maintain or to obtain a film composition. In reactive sputtering, the sputtering chamber has individual gas pressure controllers for the various gases to be added to the chamber. A holder for a substrate on which the film is to be deposited includes a heater with adjustable control. A differentially pumped quadrupole mass analyzer interconnects with the chamber bottom to receive a sample of plasma ions, measures the ionized species existing in the plasma and generates signals related to the film composition. A controller responsive to the quadrupole analyzer actuation adjusts the pressure of the one or more reactive or non-reactive gases being provided to the chamber, and/or controls other deposition parameters, such as substrate temperature or other plasma features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.