Method of forming a phosphorus-nitrogen-oxygen film on a substrate
US4172158A · kind A · utility
5Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 28, 1977 |
| Grant date | Oct 23, 1979 |
| Priority date | — |
| Expiry date | Feb 28, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400.degree.-900.degree. C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.