Semiconductor pressure transducer
US4173900A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1978 |
| Grant date | Nov 13, 1979 |
| Priority date | — |
| Expiry date | Mar 6, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.