Method of selective gas etching on a silicon nitride layer
US4174251A · kind A · utility
19Cited by
2References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 1, 1977 |
| Grant date | Nov 13, 1979 |
| Priority date | — |
| Expiry date | Dec 1, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The process of etching a silicon nitride layer disposed upon a silicon substrate is completed in two steps by using a gas atmosphere composed of changing portions of CF.sub.4 and O.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.