Annealing synthetic diamond type Ib
US4174380A · kind A · utility
20Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 14, 1977 |
| Grant date | Nov 13, 1979 |
| Priority date | — |
| Expiry date | Dec 14, 1997 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB01J2203/0695
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Type Ib synthetic diamond crystal is annealed at an annealing temperature ranging from about 1500.degree. C. to about 2200.degree. C. under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least about 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.