Capless annealing compound semiconductors
US4174982A · kind A · utility
8Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 6, 1977 |
| Grant date | Nov 20, 1979 |
| Priority date | — |
| Expiry date | Jun 6, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for capless annealing compound semiconductors such as ion-implanted GaAs semiconductors. The surface of the semiconductor to be protected during annealing is placed in loose physical contact with an inert material such as powdered graphite. The assembly is placed in a controlled atmosphere and heated to the annealing temperature where it is maintained until annealed. The semiconductor is cooled and then removed from the controlled atmosphere and inert material. In one embodiment, a volatile one of the elements in the compound is introduced into the inert material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.