Method for enhancing the adhesion of photoresist to polysilicon
US4176003A · kind A · utility
38Cited by
5References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1978 |
| Grant date | Nov 27, 1979 |
| Priority date | — |
| Expiry date | Feb 22, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An adhesion-enhancing technique for preparing the surface of a polycrystalline silicon body to receive organic photoresist. In an exemplary procedure, the polysilicon is placed in an oxygen plasma chamber operating under rf power of about 90 milliwatts per cubic centimeter of chamber volume and a pressure of approximately 1 torr for 10 minutes to form an adhesion-enhancing oxide monolayer on the polysilicon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.