Semiconductor optical device
US4176367A · kind A · utility
19Cited by
2References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 10, 1978 |
| Grant date | Nov 27, 1979 |
| Priority date | — |
| Expiry date | Mar 10, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/18
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A semiconductor optical device includes a semiconductor body, a light emitting layer formed on the body to form a pn junction therebetween, a semiconductor layer formed on the light emitting layer and a diffusing region formed in the semiconductor layer to define a pn junction therebetween and electrically connected to the light emitting layer. Three electrodes are respectively provided on the semiconductor body, semiconductor layer and diffusing region, which are selectively operated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.