Semiconductor device having oxygen doped polycrystalline passivation layer
US4176372A · kind A · utility
21Cited by
7References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 1977 |
| Grant date | Nov 27, 1979 |
| Priority date | — |
| Expiry date | Dec 5, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polycrystalline layer is formed as a passivation layer on a monocrystalline semiconductor substrate, the polycrystalline layer containing oxygen in the range between 2 to 45 atomic percent. The density of surface states between the surface of said substrate and the polycrystalline silicon layer is less than 10.sup.10 /cm.sup.2 .multidot.eV at the middle portion of a forbidden band, and the interface density of fixed charge in the polycrystalline layer is less than 10.sup.10 /cm.sup.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.