Bubble memory structure with enhanced data density
US4176404A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1978 |
| Grant date | Nov 27, 1979 |
| Priority date | — |
| Expiry date | Jan 13, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0875
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic bubble memory structure having an enhanced storage density is made possible by reducing the circuit period, that is the distance between bubbles, in the storage section of the device. This reduction of the circuit period is made possible by using a gap tolerant propagation element, e.g. asymmetrical chevrons. The bubble storage sections are structured such that the areas closest to the transfer gates have a larger circuit period than the remainder of the storage section. The bubble chip architecture utilizing this means of enhancing the storage density may be of the major-minor loop configuration or the block-replicate configuration. Bubble storage sections in the form of loop structures may have a folded loop or an h loop configuration as well as a closed loop configuration. The reduction in circuit period accomplishes enhancement of the storage density without reducing the bubble diameter and other minimum circuit features to achieve this goal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.