Process for fabricating an integrated circuit subsurface zener diode utilizing conventional processing steps
US4177095A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 14, 1978 |
| Grant date | Dec 4, 1979 |
| Priority date | — |
| Expiry date | Aug 14, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/983
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A zener diode is incorporated into a conventional integrated circuit without changing the process. The structure employed produces a diode that breaks down in a subsurface region, thus avoiding the noise and instabilities that attend surface breakdown. An isolation diffusion is employed to make the anode and an NPN transistor emitter diffusion is employed to provide the cathode. If the emitter diffusion diameter is larger than the oxide cut used to achieve isolation predeposition and is concentric therewith, the resulting zener diode will have its breakdown region confined to under the emitter diffusion. The diode action is thereby remote from surface junction breakdown effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.